Making copper interconnects viable required solving three problems: determining how best to chemically deposit it on the wafer, how to protect the silicon from being poisoned, and how to physically lay the copper out on the chip.
IBM tested several methods to apply the copper, including depositing solid copper from a gas suspension, and using an electrical charge to draw copper ions from liquid onto the silicon, a process called electroless plating. While the former method, known as sputtering, initially seemed promising, scientists settled on a third option, electrolytic plating, an impractical but familiar — and surprisingly successful — approach.
To protect the silicon, IBM scientists deployed a stable metal that the company had researched in the mid-1980s as a diffusion barrier against stray copper ions. The company devised a way to deposit the diffusion barrier in the wafers along with copper. Researchers borrowed an etching technique that IBM had invented in the early 1980s for its DRAM program.
Named for the metallurgists of old Damascus, Syria, who perfected a process to inlay metal, the so-called dual-damascene method for etching the wires and vias of the copper interconnects was critical to the success of the project. By removing depositing and polishing steps from the typical manufacturing process, it created a big economic incentive to pursue a workable solution in copper.