Paving the way to effective 32nm: The Alliance is claiming an advance on 32nm high-k metal gate production processes and are demonstrating it at the IBM 300mm semiconductor fab in East Fishkill, NY. The group claims the circuits achieved 35 percent better performance than 45nm circuits at the same operating voltage (on average) and also consumed between 30 to 50 percent less power with respect to operating voltage. Testing on product library test chip and industry standard microprocessor critical paths shows performance improvements of up to 40 percent over conventional (Poly/SiON) technology at the same technology dimensions. Alliance partners (IBM, Infineon, ST Microelectronics, Chartered Semiconductor, Freescale, Samsung, and Toshiba) can start designing for the process now and should be able to access the technology in 2009.
It came from the Fab: 32nm high-k metal gate process refined and ready