Memory

Researchers celebrate 20th anniversary of IBM’s invention of Spin Torque MRAM by demonstrating scalability for the next decade

“A new mechanism is proposed for exciting the magnetic state of a ferromagnet.” Twenty years ago, these words were written by IBM scientist John Slonczewski in his seminal paper entitled “Current-driven excitation of magnetic multilayers” in the Journal of Magnetism and Magnetic Materials. Today, they are helping scientists overcome several technical hurdles in the development […]

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