Microelectronics

Our 2 nm chip: the sum of several “Aha!” moments

Today’s announcement isn’t just that our new Gate-All-Around (GAA) nanosheet device architecture enables us to fit 50 billion transistors in a space roughly the size of a fingernail. It’s not just that IBM Research’s second-generation nanosheet technology has paved a path to the 2-nanometer (nm) node. Or that we produced this breakthrough technology on a 300 millimeter (mm) wafer built at IBM Research’s semiconductor research facility in Albany, NY. It’s all of those things, of course.

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World’s smallest DRAM cell promises low-power memory in future mobile devices

In a new paper published in Nature Electronics, IBM researchers demonstrate the smallest ever built DRAM memory cell, fifty years after its invention. The new DRAM cells feature potentially low power consumption and an unprecedented small footprint. They could be therefore particularly appealing for implementation in mobile devices or as cache memory.

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High-Yield and Ambient-Stable Molecular Devices via Semiconductor Fabrication

A team from IBM Research-Zurich and the Universities of Basel and Zurich developed a new technique to fabricate microelectronic devices by electrically contacting molecules at two well-defined termini. The method allows molecular integration on conventional silicon chips and by standard fabrication methods as used in semiconductor industry. The technique is based on depositing a nanoparticle […]

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Future semiconductor research leadership empowered by design automation

This article authored by Myung-hee Na, Senior Technical Staff Member, Semiconductor Technology Research, IBM Research; Karim El Sayed, Director of R&D, Synopsys; Victor Moroz, Synopsys Fellow, Synopsys The number of variables in semiconductor development seem to be inversely proportional to a chip’s dimensions – the smaller our chips get, the more complicated they are to build. […]

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Recent papers detail carbon nanotube scalabilty, integration breakthroughs

Carbon nanotubes (CNT) appeal to the semiconductor industry because they’re superior electrical conductors compared to silicon with a mere 1 nanometer body thickness. So why don’t we have CNT chips in everything from mainframes to mobile devices, yet? Scalability of the transistor and large-scale integration are still big challenges. But two papers my colleagues and […]

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Using an air cavity to boost the performance of a 5G antenna module

This week the International Microwave Symposium kicks off as part of Microwave Week 2017, where I am giving a talk on new phased array packaging developments for 5G communications. I am part of the RF Circuits and Systems Group at IBM Research which has been actively working on developing new 5G millimeterWave (mmWave) phased array […]

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Under pressure: New ptychography technique examines stressed atoms in 3D

In a small lead hutch-protected chamber at Argonne National Labs is a nano-probe that bombards nano-sized electronic devices, like a transistor, for example, with x-rays. Think of it as a CT scan. But for atoms. It’s building a 3D model of that device’s atomic structure, for which we can examine the amount of strain it […]

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You asked scientist Jessie Rosenberg anything about silicon photonics

Here’s what she said about flying qubits, wafer-scale photonic test systems, and more Silicon photonics uses light, versus electricity, to send signals from a microchip. IBM engineers use these pulses of light to increase the connectivity and bandwidth between datacenters for faster data transfer over longer distances. But silicon photonics isn’t just for datacenters. IBM […]

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Joint program puts “cognitive” in chip manufacturing

Computer chips can fail in countless ways, from countless sources in the manufacturing process. Even with terabytes of sensor data pouring from the manufacturing equipment used to make them, there are still semiconductor lemons, depressing wafer yield, performance and reliability, which drives up manufacturing and speculative maintenance intervention costs. IBM and Tokyo Electron Limited (TELTM) […]

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Advancing toward 7nm

This is the fourth of a four-part series about IBM featured papers at IEDM 2016. The annual International Electron Devices Meeting is “the world’s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling.” So IBM researchers brought their scanning probe thermometer, their air spacer for […]

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Air spacers for 10nm chips

This is the third of a four-part series about IBM featured papers at IEDM 2016. The annual International Electron Devices Meeting is “the world’s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling.” So IBM researchers brought their scanning probe thermometer, their air spacer for […]

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