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Examples of microelectronics technologies
patents
 USP 6,916,936 and USB 6,911,546 both entitled "CATALYTIC DEPOLYMERIZATION OF POLYMERS CONTAINING ELECTROPHILIC LINKAGES USING NUCLEOPHILIC REAGENTS"
Recycled polymers, such as the plastics commonly used for bottles and containers, generally were not of high quality and contained impurities and metals which limited their use. A method for depolymerizing these polymers is described which provides high quality recycled material. This is important as the laws of several countries already mandate that these bottles, containers etc. must include a minimum percentage of recycled material. The method of depolymerizing the polymer occurs in the presence of a catalyst and a nucleophilic reagent to yield a recycled plastic that is substantially free of undesirable by-products. This allows the use of recycled material to save costs while complying with the law and providing a lessened environmental impact. Jointly invented with Stanford University.
USP 6,916,670 entitled "ELECTRONIC PACKAGE REPAIR PROCESS"
A method for repairing defective electrical connections in a multilayer ceramic (MLC) substrate package, of the type often used in large servers and mainframe machines. Multilayer ceramic substrates are very difficult to repair because the defects are contained within the substrate and present repair techniques are very costly. The method of this patent is much less expensive and uses numerically controlled tooling to define and form an electrical connection between a defective net within a multilayer ceramic substrate and a repair net. The repair net is a redundant net placed within the MLC substrate. Rather than rely on costly thin film structures to build a new electrical connection on the top surface of the MLC, this new repair is embedded into the surface of the MLC substrate through a laser ablation process and a metal deposition process.
USP 6,876,028 entitled "METAL-INSULATOR-METAL CAPACITOR AND METHOD OF FABRICATION"
A metal-insulator-metal (MIM) capacitor especially suitable in chips using copper interconnection metallurgy. Capacitors are increasingly being used in integrated circuits, and particularly in radio frequency (RF) and other high frequency applications. The requirements for high performance capacitors in these high frequency applications has necessitated the use of high k dielectric materials for the insulator in the MIM capacitor. However, these high k dielectrics have problems when used in integrated circuits having copper interconnections. In particular, they have poor resistance to copper diffusion, which can lead to yield and reliability problems. The MIM capacitor of this invention solves these problems and uses a copper bottom electrode having a conductive diffusion barrier between the high k insulator and the bottom copper electrode.
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